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MITSUBISHI Nch POWER MOSFET
FY10AAJ-03A
HIGH-SPEED SWITCHING USE
FY10AAJ-03A
OUTLINE DRAWING

Dimensions in mm
6.0 4.4
5.0
1.8 MAX.
0.4 1.27
SOURCE GATE DRAIN
q 4V DRIVE q VDSS .................................................................................. 30V q rDS (ON) (MAX) .......................................................... 13.5m q ID ......................................................................................... 10A
SOP-8
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 30 20 10 70 10 2.3 9.2 2.0 -55 ~ +150 -55 ~ +150 0.07
Unit V V A A A A A W C C g Sep.1998
L = 10H
MITSUBISHI Nch POWER MOSFET
FY10AAJ-03A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 10A, VGS = 10V ID = 5A, VGS = 4V ID = 10A, VGS = 10V ID = 10A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 30 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 1.5 9.5 15 0.095 20 1800 650 280 25 45 125 90 0.75 -- 45 Max. -- 0.1 0.1 2.0 13.5 20.0 0.135 -- -- -- -- -- -- -- -- 1.10 62.5 --
Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns
Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 15V, ID = 5A, VGS = 10V, RGEN = RGS = 50
IS = 2.3A, VGS = 0V Channel to ambient IS = 2.3A, dis/dt = -50A/s
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 2.5 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA
2
102 2.0
7 5 3 2 7 5 3 2 7 5 3 2 tw = 100s 1ms 10ms 100ms
101
1.5
1.0
100
0.5
10-1
7 5 3 2 TC = 25C Single Pulse
DC
0
0
50
100
150
200
2 3 57100 2 3 57101 2 3 57102 2 3 57103 2
CASE TEMPERATURE TC (C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 50
4V
OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 10V 8V 6V 4V 3.5V TC = 25C Pulse Test
DRAIN CURRENT ID (A)
40
30
VGS = 10V 8V 6V
TC = 25C Pulse Test 3.5V
DRAIN CURRENT ID (A)
16
12
3V
20
3V
8
10
PD = 2W
4
PD = 2W
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998
MITSUBISHI Nch POWER MOSFET
FY10AAJ-03A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.0
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
TC = 25C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m)
TC = 25C Pulse Test
0.8
32
0.6
24
VGS = 4V 10V
0.4
ID = 20A 10A
16
0.2
5A
8 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 50
TC = 25C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102
VDS = 10V 7 Pulse Test 5 4 3 2 TC = 25C 75C 125C
DRAIN CURRENT ID (A)
30
FORWARD TRANSFER ADMITTANCE yfs (S)
40
101
7 5 4 3 2
20
10
0
0
2
4
6
8
10
100 0 10
2
3 4 5 7 101
2
3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104
7 5 3 2
SWITCHING CHARACTERISTICS (TYPICAL) 104
7 5 4 3 2 td(off)
103
7 5 3 2
Coss Crss
SWITCHING TIME (ns)
Ciss
CAPACITANCE Ciss, Coss, Crss (pF)
103 tf
7 5 4 3 tr 2 td(on)
102
7 5 3 TCh = 25C 2 f = 1MHZ VGS = 0V
101 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V)
102 0 10
TCh = 25C VDD = 15V VGS = 10V RGEN = RGS = 50 2 3 4 5 7 101 2 3 4 5 7 102
DRAIN CURRENT ID (A) Sep.1998
MITSUBISHI Nch POWER MOSFET
FY10AAJ-03A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50
SOURCE CURRENT IS (A)
VGS = 0V Pulse Test
10
TCh = 25C ID = 10A VDS = 15V 20V 25V
8
40
6
30
TC = 125C 75C 25C
4
20
2
10
0
0
10
20
30
40
50
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101
VGS = 10V 7 ID = 10A 5 Pulse Test 3 2
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
VDS = 10V ID = 1mA
3.2
2.4
100
7 5 3 2
1.6
0.8
10-1
-50
0
50
100
150
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
TRANSIENT THERMAL IMPEDANCE Zth (ch - a) (C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102
7 5 D = 1.0 3 2 0.5 5 0.1 3 2 0.05 7 5 0.01 3 2 7 Single Pulse 5 3 2 PDM
tw T D= tw T
1.2
101 0.2 7
1.0
100 0.02
0.8
0.6
10-1
0.4
-50
0
50
100
150
10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) Sep.1998
CHANNEL TEMPERATURE Tch (C)

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